Comparison of optical properties of TiO₂ thin films prepared by reactive magnetron sputtering and electron-beam evaporation techniques
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Comparison of optical properties of TiO₂ thin films prepared by reactive magnetron sputtering and electron-beam evaporation techniques
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| Creator |
Brus, V.V.
Kovalyuk, Z.D. Parfenyuk, O.A. Vakhnyak, N.D. |
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| Description |
The envelope method was used to determine optical constants of TiO₂ thin films deposited by DC reactive magnetron sputtering and electron-beam evaporation techniques. The density and thickness of the thin films were calculated. Optical properties of the TiO₂ thin films were strongly dependent on the deposition technology. The TiO₂ thin films prepared by magnetron sputtering and electron-beam evaporation methods were established to be indirect band semiconductors with the band gap energies 3.15 and 3.43 eV, respectively. |
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| Date |
2017-05-26T17:41:22Z
2017-05-26T17:41:22Z 2011 |
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| Type |
Article
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| Identifier |
Comparison of optical properties of TiO₂ thin films prepared by reactive magnetron sputtering and electron-beam evaporation techniques / V.V. Brus, Z.D. Kovalyuk, O.A. Parfenyuk, N.D. Vakhnyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 427-431. — Бібліогр.: 12 назв. — англ.
1560-8034 PACS 78.66.-w, 81.15.Cd, Dj http://dspace.nbuv.gov.ua/handle/123456789/117790 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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