Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films
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| Creator |
Rubish, V.M.
Gera, E.V. Durcot, M.O. Pop, M.M. Kostyukevich, S.O. Kudryavtsev, A.A. Mykulanynets-Meshko, O.S. Rigan, M.Yu. |
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| Description |
The optical transmissions spectra of amorphous Ge-S-Se films of chemical compositions (GeS₂)₅₀(GeSe₂)₅₀ and (GeS₃)₅₀(GeSe₃)₅₀, prepared by thermal evaporation, have been measured over the whole 400 to 800 nm spectral range. It has been ascertained that annealing of the films leads to the absorption edge shift into the short-wave spectral region. The values of pseudo-gap width Eg and film refraction index n have been determined. Changes in optical properties of films are caused by structural transformations taking place in them under laser illumination and annealing. |
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| Date |
2017-05-26T18:53:13Z
2017-05-26T18:53:13Z 2013 |
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| Type |
Article
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| Identifier |
Photo- and thermally-induced changes in the optical properties
of Ge-S-Se amorphous films / V.M. Rubish, E.V. Gera, M.O. Durcot, M.M. Pop, S.O. Kostyukevich, A.A. Kudryavtsev, O.S. Mykulanynets-Meshko, M.Yu. Rigan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 349-353. — Бібліогр.: 30 назв. — англ.
1560-8034 PACS 78.66.Jg http://dspace.nbuv.gov.ua/handle/123456789/117814 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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