Influence of mutual drag of light and heavy holes on magnetoresistivity and Hall-effect of p-silicon and p-germanium
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Influence of mutual drag of light and heavy holes on magnetoresistivity and Hall-effect of p-silicon and p-germanium
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| Creator |
Boiko, I.I.
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| Description |
Hall-effect and magnetoresistivity of holes in silicon and germanium are considered with due regard for mutual drag of light and heavy band carriers. Search of contribution of this drag shows that this interaction has a sufficient influence on both effects. |
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| Date |
2017-05-26T17:43:02Z
2017-05-26T17:43:02Z 2011 |
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| Type |
Article
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| Identifier |
Influence of mutual drag of light and heavy holes
on magnetoresistivity and Hall-effect of p-silicon and p-germanium / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 437-440. — Бібліогр.: 10 назв. — англ.
1560-8034 PACS 61.72, 72.20 http://dspace.nbuv.gov.ua/handle/123456789/117793 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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