Seebeck’s effect in p-SiGe whisker samples
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Seebeck’s effect in p-SiGe whisker samples
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| Creator |
Dolgolenko, A.P.
Druzhinin, A.A. Karpenko, A.Ya. Nichkalo, S.I. Ostrovsky, I.P. Litovchenko, P.G. Litovchenko, A.P. |
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| Description |
p-SiGe whisker samples with a diameter of ~40 μm, grown by chemical precipitation from the vapor phase, have been investigated. Temperature dependences of the thermal e.m.f. and conductivity within the temperature interval 20…400 K have been measured. It has been shown that the mobility of holes in p - SiGe whiskers upon the average is 1.5 times higher than that in bulk p - Si samples. p - SiGe whiskers possess smaller phonon scattering and larger phonon dragging in comparison with the bulk p - Si samples. |
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| Date |
2017-05-26T17:34:32Z
2017-05-26T17:34:32Z 2011 |
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| Type |
Article
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| Identifier |
Seebeck’s effect in p-SiGe whisker samples / A.P. Dolgolenko, A.A. Druzhinin, A.Ya. Karpenko, S.I. Nichkalo, I.P. Ostrovsky, P.G. Litovchenko, A.P. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 456-460 — Бібліогр.: 6 назв. — англ.
1560-8034 PACS 72.15.Jf, 72.20.Pa http://dspace.nbuv.gov.ua/handle/123456789/117783 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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