Electron-hole Fermi liquid in nanosized semiconductor structures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Electron-hole Fermi liquid in nanosized semiconductor structures
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| Creator |
Litovchenko, V.G.
Grygoriev, A.A. |
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| Description |
The experimental and theoretical results on the quantum-sized electron-hole liquid plasma (EHLP) in semiconductors and analysis of the difference of it in comparison to the bulk one have been presented. The non-equilibrium Fermi EHLP can be created in the bulk and layered structures (insulator-semiconductor interfaces, thin films, quantum superlattices, etc.) at low temperatures and powerful laser radiation. In the quantum-sized structures, however, these phenomena appear at much higher temperatures, up to the room ones. The peculiarities of EHLP phenomena are: (1) appearance the very broad luminescence line in the low-energy side of its spectrum, which have constant width and energy position under variation of the light intensity as well as narrowing peak when increasing the temperature; (2) appearance of stimulated radiation with a relatively low excitation threshold (the so-called “surface laser effect”); (3) planar ballistic expansion of electron-hole plasma over long distances; (4) predicted effect of transformation of non-equilibrium 2D plasmons into radiative modes. |
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| Date |
2017-05-26T14:39:49Z
2017-05-26T14:39:49Z 2010 |
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| Type |
Article
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| Identifier |
Electron-hole Fermi liquid in nanosized semiconductor structures / V.G. Litovchenko, A.A. Grygoriev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 51-57. — Бібліогр.: 22 назв. — англ.
1560-8034 PACS 71.10.A, Ca; 71.35.Ee http://dspace.nbuv.gov.ua/handle/123456789/117740 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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