Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes
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| Creator |
Belyaev, A.E.
Boltovets, N.S. Konakova, R.V. Kudryk, Ya.Ya. Sorokin, V.M. Sheremet, V.N. Shynkarenko, V.V. |
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| Description |
Some aspects of measuring the thermal resistance to a constant heat flow at a p-n junction–package region in IMPATT and light-emitting diodes are considered. We propose a method of studying the thermal resistance of high-power light-emitting diodes. This method makes it possible to increase accuracy of measuring the thermal resistance by determining the temperature at a linear section of the voltage−temperature curve. A possibility to measure the thermal resistance of IMPATT diodes by using the pulse I-V curves is shown. This enables one to simplify calculations and increase accuracy of measuring the thermal resistance. |
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| Date |
2017-05-26T17:46:22Z
2017-05-26T17:46:22Z 2011 |
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| Type |
Article
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| Identifier |
Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes / A.E. Belyaev, N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, V.M. Sorokin, V.N. Sheremet, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 465-469. — Бібліогр.: 17 назв. — англ.
1560-8034 PACS 07.20.-n, 85.30.Kk, 85.60.Jb http://dspace.nbuv.gov.ua/handle/123456789/117797 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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