On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step
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| Creator |
Sachenko, A.V.
Belyaev, A.E. Boltovets, N.S. Vinogradov, A.O. Pilipenko, V.A. Petlitskaya, T.V. Anischik, V.M. Konakova, R.V. Korostinskaya, T.V. Kostylyov, V.P. Kudryk, Ya.Ya. Lyapin, V.G. Romanets, P.N. Sheremet, V.N. |
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| Description |
We present both theoretical and experimental temperature dependences of contact resistivity ρс(Т) for ohmic contacts to the silicon n⁺ -n-structures whose n⁺ -layer was formed using phosphorus diffusion or ion implantation. The ρс(Т) dependence was measured in the 125–375 K temperature range with the transmission line method, with allowance made for conduction in both the n⁺ -layer and n⁺ -n doping step. |
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| Date |
2017-05-26T17:38:55Z
2017-05-26T17:38:55Z 2014 |
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| Type |
Article
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| Identifier |
On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step / A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, A.O. Vinogradov, V.A. Pilipenko, T.V. Petlitskaya, V.M. Anischik, R.V. Konakova, T.V. Korostinskaya, V.P. Kostylyov, Ya.Ya. Kudryk, V.G. Lyapin, P.N. Romanets, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 1-6. — Бібліогр.: 15 назв. — англ.
1560-8034 PACS 73.40.Ns, 73.40.Cg, 85.40.-e http://dspace.nbuv.gov.ua/handle/123456789/117786 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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