Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties
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| Creator |
Bilozertseva, V.I.
Khlyap, H.M. Shkumbatyuk, P.S. Dyakonenko, N.L. Mamaluy, A.O. Gaman, D.O. |
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| Description |
The results of structural investigations and electric field-induced properties of thin (40–100 nm) Li-Bi-Se films grown on glass substrates by means of the resistive evaporation technique are reported. The experimental investigations of microstructure and phase composition of thin films by transmission electron microscopy (TEM) and electron diffraction methods are carried out. Тhe experimental current-voltage dependences and transport of charge carriers are discussed. |
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| Date |
2017-05-26T15:02:43Z
2017-05-26T15:02:43Z 2010 |
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| Type |
Article
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| Identifier |
Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties / V.I. Bilozertseva, H.M. Khlyap, P.S. Shkumbatyuk, N.L. Dyakonenko, A.O. Mamaluy, D.O. Gaman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 61-64. — Бібліогр.: 12 назв. — англ.
1560-8034 PACS 61.46.-w, 73.63.-b http://dspace.nbuv.gov.ua/handle/123456789/117743 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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