Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing
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| Creator |
Smyntyna, V.A.
Sviridova, O.V. |
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| Description |
The type, density, and distribution of defects in initial and oxidated monocrystalline silicon wafers were studied by modern methods. It was established that disordered silicon and stacking faults are basic defects in near-surface layers of oxidated monocrystalline silicon. It was shown that stacking faults are generated during the oxidation process, and the mechanism of their formation is connected with the defective layered structure of initial silicon wafers. It was established that defects of layered heterogeneity, on the one hand, lead to the formation of stacking faults and, on the other hand, prevent their propagation to the wafer bulk. |
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| Date |
2017-05-26T15:40:24Z
2017-05-26T15:40:24Z 2010 |
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| Type |
Article
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| Identifier |
Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing/ V.A. Smyntyna and O.V. Sviridova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 74-78. — Бібліогр.: 17 назв. — англ.
1560-8034 PACS 61.72.Nn http://dspace.nbuv.gov.ua/handle/123456789/117746 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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