Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures
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| Creator |
Veleschuk, V.P.
Lyashenko, O.V. Vlasenko, Z.K. Kysselyuk, M.P. |
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| Description |
It was shown that in the GaAsP/GaP and InGaN/GaN heterostructures during current passage redistribution of electroluminescence intensity on the structure surface takes place simultaneously with radiation of acoustic emission. Local (on surface area) fluctuations of electroluminescence intensity are observed together with general degradation of electro-physical parameters. |
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| Date |
2017-05-26T15:41:11Z
2017-05-26T15:41:11Z 2010 |
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| Type |
Article
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| Identifier |
Acoustic emission and fluctuations of electroluminescence intensity
in light-emitting heterostructures / V.P. Veleschuk, O.V. Lyashenko, Z.K. Vlasenko, M.P. Kysselyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 79-83. — Бібліогр.: 13 назв. — англ.
1560-8034 PACS 43.35+d, 43.50+y, 72.70+m, 73.50.TD, 78.60.Fi, 78.66.Fd http://dspace.nbuv.gov.ua/handle/123456789/117747 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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