Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist
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| Creator |
Min’ko, V.I.
Shepeliavyi, P.E. Indutnyy, I.Z. Litvin, O.S. |
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| Description |
Application of inorganic photoresist based on chalcogenide films for fabrication of submicrometer periodic relief on silicon wafers was investigated. For this purpose, technological process of resistive two-layer chalcogenide-Cr mask formation on a silicon surface was developed, and silicon anisotropic etching was optimized, too. This technology has been used for the fabrication of high-quality diffraction gratings on Si (100) surface with symmetric triangular and trapezium grooves and two-dimentional periodic structures. Relief parameters and diffraction properties of the obtained structures and their dependences on etching time were determined |
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| Date |
2017-05-26T17:21:29Z
2017-05-26T17:21:29Z 2007 |
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| Type |
Article
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| Identifier |
Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist / V.I. Min'ko, P.E. Shepeliavyi, I.Z. Indutnyy, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 40-44. — Бібліогр.: 16 назв. — англ.
1560-8034 PACS 42.70.L, 42.40.Ht, 78.20.e http://dspace.nbuv.gov.ua/handle/123456789/117772 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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