Polarization analysis of birefringence in uniaxially deformed silicon crystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Polarization analysis of birefringence in uniaxially deformed silicon crystals
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| Creator |
Berezhinsky, L.I.
Berezhinsky, I.L. Pipa, V.I. Matyash, I.Ye. Serdega, B.K. |
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| Description |
The birefringence induced by uniaxial compression in low-doped silicon crystals was investigated both theoretically and experimentally. The circular components of the Stokes vector in the transmission and reflectance radiation are measured as a function of external pressure by using the method based on the modulation of radiation polarization. The value of the Brewster constant was obtained for absorption (λ = 0.63 µm) and transparence (λ = 1.15 µm) regions. The obtained experimental data are in a good agreement with calculation results based on the anisotropy model of dielectric properties within the framework of the Hook law. Shown is the practical importance of the polarization analysis in researching anisotropy of dielectric properties of materials. |
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| Date |
2017-05-26T17:22:11Z
2017-05-26T17:22:11Z 2007 |
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| Type |
Article
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| Identifier |
Polarization analysis of birefringence in uniaxially deformed silicon crystals / L.I. Berezhinsky, I.L. Berezhinsky, V.I. Pipa, I.Ye. Matyash, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 49-54. — Бібліогр.: 12 назв. — англ.
1560-8034 PACS 78.20.Fm http://dspace.nbuv.gov.ua/handle/123456789/117773 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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