Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field
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| Creator |
Trachevsky, V.V.
Steblenko, L.P. Demchenko, P.Y. Koplak, O.V. Kuryliuk, A.M. Melnik, A.K. |
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| Description |
In this work, the influence of weak magnetic field on structure-dependent properties of micro-structured Si was determined. The researches of EPR-spectra inherent to micro-structured Si showed the presence of the spectral line at H ~ 3500 Oe that appears from centers with the g-factor g ~ 2.0010 (Pв – centers). Intensity of the determined spectral line decreases twice after magnetic processing. The observed redox processes and evolution of defect structure are interpreted as the influence of magnetic field on micro-structured Si. Calculations made using the data of X-ray diffractometric researches showed an essential decrease of internal strains and respective increase of the lattice parameter in micro-structured Si samples after magnetic processing in the weak magnetic field. |
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| Date |
2017-05-26T17:59:31Z
2017-05-26T17:59:31Z 2010 |
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| Type |
Article
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| Identifier |
Changes in the state of paramagnetic centers and lattice parameter
of micro-structured Si under the influence of weak magnetic field / V.V. Trachevsky, L.P. Steblenko, P.Y. Demchenko, O.V. Koplak, A.M. Kuryliuk, A.K. Melnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 87-90. — Бібліогр.: 17 назв. — англ.
PACS 61.43.Dq, 61.72.Dd, 68.35.Dv, 76.30.Mi 1560-8034 http://dspace.nbuv.gov.ua/handle/123456789/117805 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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