Spin-dependent current in silicon p-n junction diodes
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Spin-dependent current in silicon p-n junction diodes
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| Creator |
Tretyak, O.V.
Kozonushchenko, O.I. Krivokhizha, K.V. Revenko, A.S. |
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| Description |
We have used electrically detected spin-dependent paramagnetic resonance to investigate the non-equilibrium conductivity in a silicon diode. In order to create paramagnetic centers, we used diode with a polished surface (that includes p-n junction). The dependence of relative changes in the amplitude of a signal under resonance conditions and the total value of current through the diode were investigated. We have found the presence of inversion channel on the surface of p-n junction and proposed the model of the influence of spin resonance on the channel conductivity. The upper value of the time constant inherent to the spin-dependent process was determined as approximately 10⁻⁶ s . The influence of the spin-dependent process on the charge state in inversion channel has been discussed. |
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| Date |
2017-05-26T18:01:45Z
2017-05-26T18:01:45Z 2010 |
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| Type |
Article
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| Identifier |
Spin-dependent current in silicon p-n junction diodes/O.V. Tretyak, O.I. Kozonushchenko, K.V. Krivokhizha, A.S. Revenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 95-97. — Бібліогр.: 10 назв. — англ.
1560-8034 PACS 73.20.-r, 73.40.-c, 85.30.Kk http://dspace.nbuv.gov.ua/handle/123456789/117808 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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