Overheating effect and hole-phonon interaction in SiGe heterostructures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Overheating effect and hole-phonon interaction in SiGe heterostructures
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| Creator |
Berkutov, I.B.
Andrievskii, V.V. Komnik, Yu.F. Myronov, M. Mironov, O.A. |
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| Subject |
Низкоразмерные и неупорядоченные системы
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| Description |
The effect of the charge carriers overheating in a two-dimensional (2D) hole gas in a Si1–xGex quantum well, where x = 0.13; 0.36; 0.8, 0.95, has been realized. The Shubnikov–de Haas (SdH) oscillation amplitude was used as a «thermometer» to measure the temperature of overheated holes. The temperature dependence of the hole–phonon relaxation time was found using analysis of dependence of amplitude of SdH oscillations change on temperature and applied electrical field. Analysis of the temperature dependence of the hole–phonon relaxation time exhibits transition of 2D system from regime of «partial inelasticity» to conditions of small angle scattering. |
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| Date |
2017-05-27T10:53:15Z
2017-05-27T10:53:15Z 2008 |
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| Type |
Article
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| Identifier |
Overheating effect and hole-phonon interaction in SiGe heterostructures / I.B. Berkutov, V.V. Andrievskii, Yu.F. Komnik, M. Myronov, O.A. Mironov // Физика низких температур. — 2008. — Т. 34, № 11. — С. 1192-1196. — Бібліогр.: 14 назв. — англ.
0132-6414 PACS: 72.15.Lh;72.20.Ht;72.20.My http://dspace.nbuv.gov.ua/handle/123456789/117882 |
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| Language |
en
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| Relation |
Физика низких температур
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| Publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
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