Запис Детальніше

Investigation of electron-phonon interaction in bulk and nanostructured semiconductors

Vernadsky National Library of Ukraine

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Поле Співвідношення
 
Title Investigation of electron-phonon interaction in bulk and nanostructured semiconductors
 
Creator Yaremko, A.M.
Yukhymchuk, V.O.
Dzhagan, V.M.
Valakh, M.Ya.
Azhniuk, Yu.M.
Baran, J.
Ratajczak, H.
Drozd, M.
 
Description In this paper, the problem of electron-phonon interaction (EPI) innsemiconductor crystals and quantum dots (QDs) is considered. It is shown that the model of strong EPI developed for organic molecular crystals can be successfully applied to bulk and nanosized semiconductors. The idea of the approach proposed here is to
describe the experimental Raman (or absorption) spectra containing the phonon replicas
theoretically by varying the EPI constant. The main parameter of the theoretical
expression describing the experimental spectrum is the ratio of EPI constant to the
frequency of the corresponding phonon mode. Based on the experimental and theoretical results, we have found that decreasing the size of CdSxSe₁₋x QDs embedded in borosilicate glass matrix results in some enhancement of electron-phonon interaction.
 
Date 2017-05-27T09:44:41Z
2017-05-27T09:44:41Z
2007
 
Type Article
 
Identifier Investigation of electron-phonon interaction in bulk and nanostructured semiconductors / A.M. Yaremko, V.O. Yukhymchuk, V.M. Dzhagan, M.Ya. Valakh, Yu.M. Azhniuk, J. Baran, H. Ratajczak, M. Drozd // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 1-5. — Бібліогр.: 13 назв. — англ.
1560-8034
PACS 63.20.Dj, 73.40.Lq
http://dspace.nbuv.gov.ua/handle/123456789/117861
 
Language en
 
Relation Semiconductor Physics Quantum Electronics & Optoelectronics
 
Publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України