Запис Детальніше

Amplification of localized acoustic waves by the electron drift in a quantum well

Vernadsky National Library of Ukraine

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Поле Співвідношення
 
Title Amplification of localized acoustic waves by the electron drift in a quantum well
 
Creator Demidenko, A. A.
Kochelap, V. A.
 
Description We have investigated acoustic waves in a heterostructure with a layer embedded into a semiconductor providing acoustic waves localization near the layer and electron confinement inside the layer. For layer thicknesses smaller than wavelengths we have obtained and analyzed the dispersion relation for the localized waves. For electrons into the layer we have supposed that parallel transport is semiclassical, while perpendicular electron motion is quantized. For two-dimensional confined electrons interacting with the acoustic waves we have solved the Boltzmann equation in a parallel electric field. The solutions have been found for electron-phonon interaction via deformation potential. The dispersion relation for coupled charge density and acoustic waves has been analyzed. We have established conditions of amplification of localized acoustic waves under the electron drift for two extreme cases: i) the only lowest two-dimensional subband is populated, ii) a large number of the subbands are populated. We have found that the amplification coefficient of the acoustic waves in THz-rigion is of the order of 100 cm⁻¹. We have discussed the results and compared them with acoustic waves amplification in bulk like semiconductors.
 
Date 2017-05-27T09:29:28Z
2017-05-27T09:29:28Z
1999
 
Type Article
 
Identifier Amplification of localized acoustic waves by the electron drift in a quantum well / A. A. Demidenko, V. A. Kochelap // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 11-24. — Бібліогр.: 32 назв. — англ.
1560-8034
PACS 63.22, 72.20, 73.20.D
http://dspace.nbuv.gov.ua/handle/123456789/117857
 
Language en
 
Relation Semiconductor Physics Quantum Electronics & Optoelectronics
 
Publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України