Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands
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| Creator |
Grigorchuk, N. I.
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| Description |
Within the framework of the dipole approximation the line-shape of light absorption for exciton transitions between broad bands in one-, two- and three-dimensional organic semiconductor structures are calculated. Exciton damping due to lattice imperfections is accounted for as a frequency independent parameter. The obtained analytical expressions allow analyses of the line-shape for different space dimensions of structure depending on bandwidth difference, damping parameter and temperature.
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| Date |
2017-05-27T09:30:08Z
2017-05-27T09:30:08Z 1999 |
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| Type |
Article
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| Identifier |
Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands / N. I. Grigorchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 25-30. — Бібліогр.: 21 назв. — англ.
1560-8034 PACS 71.35; 71.36; 78.20; S12 http://dspace.nbuv.gov.ua/handle/123456789/117858 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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