Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures
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| Creator |
Lysenko, V.S.
Tyagulsky, I.P. Osiyuk, I.N. Nazarov, A.N. |
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| Description |
The results of experiments on the influence of recharging the electron traps in a Si-SiO₂ transition layer on the low-temperature characteristics of fully depleted silicon in insulator MOSFET devices are presented. It is shown that the low-dose gammaradiation improves electrophysical parameters of the transition layer. |
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| Date |
2017-05-27T11:04:20Z
2017-05-27T11:04:20Z 2007 |
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| Type |
Article
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| Identifier |
Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures / V.S. Lysenko, I.P. Tyagulsky, I.N. Osiyuk, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 34-39. — Бібліогр.: 7 назв. — англ.
1560-8034 PACS 68.35.-c, 72.20.Jv, 73.20.-r, 73.40.-c, 85.30.Tv http://dspace.nbuv.gov.ua/handle/123456789/117890 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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