Frequency-dependent dielectric coefficients of TlInS₂ amorphous films
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Frequency-dependent dielectric coefficients of TlInS₂ amorphous films
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| Creator |
Mustafaeva, S.N.
Asadov, M.M. Qahramanov, K.Sh. |
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| Description |
The frequency dispersion of the loss tangent (tgδ) and the ac conductivity (σac) of amorphous films prepared by evaporation of TlInS₂ has been investigated at frequencies f = 5⋅10⁴…3.5⋅10⁷ Hz. It is shown that, at f > 10⁶ Hz, relaxation losses take place. It is established that the hopping conduction near the Fermi level occurs in TlInS₂ amorphous films at frequencies up to 3⋅10⁶ Hz. The density of localized states at the Fermi level, the mean time for phonon-assisted tunneling, and the hopping distance have been evaluated for polymorphic TlInS₂ films. For frequencies above 10⁷ Hz, σac( f ) ~ f₂. Such a behavior is caused by optical transitions in TlInS₂ amorphous films. |
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| Date |
2017-05-27T12:19:23Z
2017-05-27T12:19:23Z 2007 |
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| Type |
Article
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| Identifier |
Frequency-dependent dielectric coefficients of TlInS₂ amorphous films / S.N. Mustafaeva, M.M. Asadov, K.Sh. Qahramanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 58-61. — Бібліогр.: 11 назв. — англ.
1560-8034 PACS 71.20.Nr; 71.23.Cq; 71.55.Jv; 72.20.Ee; 72.30.+q; 73.20.At; 73.20.Hb http://dspace.nbuv.gov.ua/handle/123456789/117916 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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