Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds
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| Creator |
Korsunskaya, N. E.
Markevich, I. V. Dzhumaev, B. R. Borkovskaya, L. V. Sheinkman, M. K. |
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| Description |
Electron-enhanced reactions in II-VI compounds are shown to be caused by the presence of some mobile defects which diffusion is not enhanced under excitation. At the same time, electron-enhanced diffusion can be imitated in these reactions due to carrier trapping by deep centers that do or even do not take part in the reaction. To elucidate the real defect reaction mechanism a detailed study is required in every case. For this purpose, a method of mobile defect detection and their diffusion characteristic direct investigation has been elaborated.
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| Date |
2017-05-27T16:13:14Z
2017-05-27T16:13:14Z 1999 |
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| Type |
Article
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| Identifier |
Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds / N.E. Korsunskaya, I.V. Markevich, B.R. Dzhumaev, L.V. Borkovskaya, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 4246-ХХ. — Бібліогр.: 12 назв. — англ.
1560-8034 PACS 61.72.Ji, 61.72.Yx, 72.40.+w, 72.80.Ey, 78.55.Et http://dspace.nbuv.gov.ua/handle/123456789/117932 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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