Dissolution of indium arsenide in nitric solutions of the hydrobromic acid
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Dissolution of indium arsenide in nitric solutions of the hydrobromic acid
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| Creator |
Tomashik, Z.F.
Danylenko, S.G. Tomashik, V.N. |
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| Description |
Dissolution of InAs in HNO₃-HBr-H₂O solutions is studied. The surface of equal etching rates is constructed, and the limiting stages of the dissolution process are determined. Depending on the [HNO₃]/[HBr] ratio, InAs dissolution may be limited by kinetic, or diffusion, or combined mechanisms. The dissolution rate of InSb in these solutions is rather low, and the etched surface is covered with a friable sediment. HNO₃ -HBr-H₂O solutions can be employed for a dynamic chemical polishing of InAs with a variable etching rate.
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| Date |
2017-05-27T15:54:25Z
2017-05-27T15:54:25Z 1999 |
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| Type |
Article
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| Identifier |
Dissolution of indium arsenide in nitric solutions of the hydrobromic acid / Z.F. Tomashik, S.G. Danylenko, V.N. Tomashik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 80-83. — Бібліогр.: 9 назв. — англ.
1560-8034 PACS 81.65 C http://dspace.nbuv.gov.ua/handle/123456789/117925 620.193 : 546.681 19 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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