Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals
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| Creator |
Budzulyak, S.I.
Ermakov, V.M. Kyjak, B.R. Kolomoets, V.V. Machulin, V.F. Novoselets, M.K. Panasjuk, L.I. Sus', B.B. Venger, E.F. |
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| Description |
Analysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator (MI) transition determined by peculiarities of the c-band energy spectrum transformation in n-Si and n-Ge are discussed. The main statements of the effective mass-donor concept for hydrogen-like impurities in monocrystalline semiconductors were verified.
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| Date |
2017-05-27T16:45:47Z
2017-05-27T16:45:47Z 2003 |
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| Type |
Article
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| Identifier |
Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals / S.I. Budzulyak, V.M. Ermakov, B.R. Kyjak, V.V. Kolomoets, V.F. Machulin, M.K. Novoselets, L.I. Panasjuk, B.B. Sus', E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 37-40. — Бібліогр.: 16 назв. — англ.
1560-8034 PACS: 71.30.+h http://dspace.nbuv.gov.ua/handle/123456789/117939 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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