Radiation hardness of AlAs/GaAs-based resonant tunneling diodes
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Radiation hardness of AlAs/GaAs-based resonant tunneling diodes
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| Creator |
Belyaev, A.A.
Belyaev, A.E. Konakova, R.V. Vitusevich, S.A. Milenin, V.V. Soloviev, E.A. Kravchenko, L.N. Figielski, T. Wosinski, T. Makosa, A. |
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| Description |
The total dose effects of ⁶⁰Co γ-radiation on the electrical properties of double-barrier Resonant Tunneling Diodes have been studied. The devices manifest enhanced radiation hardness and conserve their operating parameters up to doses of 2×10⁹ rad. It is shown that all changes in the current-voltage characteristics stem from the effect of ionizing radiation on the undoped layers. The radiation-stimulated diffusion of the heteropair components in the contact region is shown to be important for the voltage drop distribution.
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| Date |
2017-05-27T16:05:47Z
2017-05-27T16:05:47Z 1999 |
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| Type |
Article
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| Identifier |
Radiation hardness of AlAs/GaAs-based resonant tunneling diodes/ A.A. Belyaev, A.E. Belyaev, R.V. Konakova, S.A. Vitusevich, V.V. Milenin, E.A. Soloviev, L.N. Kravchenko, T. Figielski, T. Wosinski, A. Makosa// Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 98-101. — Бібліогр.: 19 назв. — англ.
1560-8034 PACS 73.61, 85.30.M http://dspace.nbuv.gov.ua/handle/123456789/117928 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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