Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As
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| Creator |
Figielski, T.
Wosinski, T. Morawski, A. Pelya, O. Makosa, A. Dobrowolski, W. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak, J. |
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| Description |
We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions implantation, instead of chemical etching, is much better method of tailoring nanometer-size circuits in (Ga,Mn)As suitable for future spin electronics.
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| Date |
2017-05-27T16:47:27Z
2017-05-27T16:47:27Z 2003 |
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| Type |
Article
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| Identifier |
Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As / T. Figielski, T. Wosinski, A. Morawski, O. Pelya, A. Makosa, W. Dobrowolski, J. Wrobel, J. Sadowski, J. Jagielski, J. Ratajczak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 53-54. — Бібліогр.: 4 назв. — англ.
1560-8034 PACS: 75.50.Pp; 75.75.+a; 85.80.Jm http://dspace.nbuv.gov.ua/handle/123456789/117941 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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