High-resistance low-doped GaAs and AlGaAs layers obtained by LPE
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
High-resistance low-doped GaAs and AlGaAs layers obtained by LPE
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| Creator |
Krukovsky, S.I.
Zayachuk, D.M. Rybak, O.V. Mryhin, I.O. |
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| Description |
Influence of Yb and Al co-doping gallium melt during LPE growth of the GaAs epitaxial layers on their properties is investigated. It is shown that both morphology and electrophysical parameters of the films are changed under influence of the doping impurities applied. Obtained results are explained by simultaneous Yb gettering action with respect to oxygen and silicon in the solution-melt, and also by lowering the concentration of Si in the films due to Al entering into Ga sub-lattice.
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| Date |
2017-05-27T16:48:08Z
2017-05-27T16:48:08Z 2003 |
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| Type |
Article
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| Identifier |
High-resistance low-doped GaAs and AlGaAs layers obtained by LPE / S.I. Krukovsky, D.M. Zayachuk, O.V. Rybak, I.O. Mryhin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 55-57. — Бібліогр.: 9 назв. — англ.
1560-8034 PACS: 73.61.Ey http://dspace.nbuv.gov.ua/handle/123456789/117942 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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