Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide
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| Creator |
Venger, Ye.F.
Milenin, V.V. Ermolovich, I.B. Konakova, R.V. Voitsikhovskiy, D.I. Hotovy, I. Ivanov, V. N. |
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| Description |
For contacts prepared from titanium borides by and nitrides ion-plasma sputtering onto gallium arsenide both formation mechanisms and thermal stability were investigated. We used a combination of structural, secondary-emission, optical and electrophysical methods, such as electronography, X-ray diffraction, atomic force microscopy, Auger electron spectroscopy, secondary-ion mass spectrometry, taking photoluminescence spectra and I - V curves. A physical model for contact formation was proposed. According to it, BxGa₁₋xAs (GaNxAs₁₋x) solid solutions are formed at the phase interfaces when titanium borides (nitrides) are deposited. The defects are produced in the semiconductor near-surface regions during heterostructure formation and further heat treatment. The correlation between the physico-chemical interactions at contact interfaces and the contact electrophysical parameters occurs through these defects. The objects of our investigation demonstrated high thermal stability. This was due to their two-layer structure formed by components having well-pronounced antidiffusion properties. As a result, the interdiffusion processes at the phase interfaces are drastically weakened.
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| Date |
2017-05-27T16:55:52Z
2017-05-27T16:55:52Z 1999 |
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| Type |
Article
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| Identifier |
Название / Ye.F. Venger, V.V. Milenin, I.B. Ermolovich, R.V. Konakova, D.I. Voitsikhovskiy, I. Hotovy, V.N. Ivanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 124-132. — Бібліогр.: 8 назв. — англ.
1560-8034 PACS 73.40.Ns, 68.60.Dv http://dspace.nbuv.gov.ua/handle/123456789/117946 621.382.2 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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