Electric and dielectric properties of glasses of Cu-Sb-S-I system
Vernadsky National Library of Ukraine
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
Electric and dielectric properties of glasses of Cu-Sb-S-I system
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Creator |
Rubish, V.M.
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Description |
D.c. and a.c. conductivity (d(0) and d(w )) and dielectric parameters (d and tgd ) of Cu-Sb-S-I system glasses are investigated in 1.0*10⁴ - 6.0*10⁷ Hz frequency range and 170-400 K temperature interval. In the glasses of SbSI-CuSbS₂ system the d.c. conductivity along delocalized states prevails. A.c. conductivity is explained by a combinated hopping mechanism of charge transfer by bipolarons and "simple" polarons. A high concentration of charge carriers and availability of dipole structural units Cu⁺S⁻SbS₂/₂ in the glass matrix define dielectric proporties of glasses.
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Date |
2017-05-27T18:06:09Z
2017-05-27T18:06:09Z 2003 |
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Type |
Article
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Identifier |
Electric and dielectric properties of glasses of Cu-Sb-S-I system / V.M. Rubish // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 76-80. — Бібліогр.: 16 назв. — англ.
1560-8034 PACS: 72.15.Cz, 73.61.Jc, 77.22.-d http://dspace.nbuv.gov.ua/handle/123456789/117961 |
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Language |
en
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Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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