Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique
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| Creator |
Serdega, B.K.
Venger, Ye.F. Nikitenko, Ye.V. |
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| Description |
Volume-gradient photovoltage and birefrigence caused by a difference of main mechanical stress components have been studied in the Ge-monocrystal with step-like distribution of the doping impurity concentration, N. The qualitative agreement between the function obtained by integration of the spatial dependence of the anisotropy and of the coordinate dependence of the photovoltage was observed. Using this fact, the conclusion is made that the features of thermoelastic mechanical stress can be distribution of expressed by the dependence |σz - σy| ~ d²N/dz². Remove selected |
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| Date |
2017-05-27T17:42:19Z
2017-05-27T17:42:19Z 1999 |
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| Type |
Article
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| Identifier |
Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique / B.K. Serdega, Ye.F. Venger, Ye.V. Nikitenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 153-156. — Бібліогр.: 7 назв. — англ.
1560-8034 PACS 61.72 http://dspace.nbuv.gov.ua/handle/123456789/117956 535.3 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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