About manifestation of the piezojunction effect in diode temperature sensors
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
About manifestation of the piezojunction effect in diode temperature sensors
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| Creator |
Borblik, V.L.
Shwarts, Yu.M. Venger, E.F. |
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| Description |
An analytical theory of piezojunction effect has developed in application to silicon diode temperature n+-p type sensors, which for the first time takes into account three-subbands structure of the valence band of silicon. The compressive and tensile stresses (along the main crystallographic directions), long- and short-base diodes, longitudinal and transverse effects have been considered. It is shown that the three-subbands model results in even more nonlinear dependence of changes in the sensor readings on stress value (in comparison with the two-subbands model), holds minimality of the longitudinal piezojunction effect under stress orientation along the [100] direction and predicts substantially larger effect value for the strain perpendicular to the current through the diode. |
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| Date |
2017-05-27T18:31:54Z
2017-05-27T18:31:54Z 2003 |
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| Type |
Article
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| Identifier |
About manifestation of the piezojunction effect in diode temperature sensors / V.L. Borblik,Yu.M. Shwarts, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 97-101. — Бібліогр.: 13 назв. — англ.
1560-8034 PACS: 07.07.Df, 77.65.Ly, 85.30.Kk http://dspace.nbuv.gov.ua/handle/123456789/117973 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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