Charge carrier generation in photosensitive amorphous molecular semiconductors
Vernadsky National Library of Ukraine
Переглянути архів ІнформаціяПоле | Співвідношення | |
Title |
Charge carrier generation in photosensitive amorphous molecular semiconductors
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Creator |
Zabolotny, M.A.
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Description |
Thermalization process in photosensitive amorphous molecular semiconductors are theoretically considered from the standpoint of their parameters, namely: thermalization time, thermalization length. The heat electron formed in consequence of absorption of the light quantum by semiconductor molecules loses his surplus energy in the course of inelastic interaction with neighbouring atoms. The results of theoretical predictions are confirmed by the experimental ones obtained for a number of molecular semiconductors (anthracene, pentacene, PVC, PEPC).
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Date |
2017-05-27T18:32:30Z
2017-05-27T18:32:30Z 2003 |
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Type |
Article
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Identifier |
Charge carrier generation in photosensitive amorphous molecular semiconductors / M.A. Zabolotny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 102-104. — Бібліогр.: 8 назв. — англ.
1560-8034 PACS: 71.35, 72.40, 72.80.1 http://dspace.nbuv.gov.ua/handle/123456789/117974 |
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Language |
en
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Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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