Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon
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| Creator |
Dotsenko, Yu.P.
Ermakov, V.M. Gorin, A.E. Khivrych, V.I. Kolomoets, V.V. Machulin, V.F. Panasjuk, L.I. Prokopenko, I.V. Sus', B.B. Venger, E.F. |
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| Description |
Activation energy of high temperature technological thermodonors (TD) has been determined in transmutation-doped n-Si(P) using the data analysis of the Hall-effect temperature dependence. Physical mechanisms of tensoeffects in n-Si(P) crystals doped by neutron irradiation and doped at growth were studied by the tensoeffects measurements and by analysis of the pressure dependencies of the electron concentration ratio in "upper" and "lower" L1-valleys of uniaxially strained samples. Comparison of the some parameters for the crystals doped either by neutron transmutation method or in the melt is carried out.
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| Date |
2017-05-27T20:02:34Z
2017-05-27T20:02:34Z 2003 |
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| Type |
Article
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| Identifier |
Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon / Yu.P. Dotsenko, V.M. Ermakov, A.E Gorin, V.I. Khivrych, V.V. Kolomoets, V.F. Machulin, L.I. Panasjuk, I.V. Prokopenko, B.B. Sus', E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 111-114. — Бібліогр.: 9 назв. — англ.
1560-8034 PACS: 61.72.Tt, 61.80.-x http://dspace.nbuv.gov.ua/handle/123456789/117987 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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