On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes
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| Creator |
Belyaev, A.E.
Boltovets, N.S. Ivanov, V.N. Klad’ko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Kuchuk, A.V. Milenin, V.V. Sveshnikov, Yu.N. Sheremet, V.N. |
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| Description |
We investigated a current flow mechanism in the Au−TiBx−n-GaN−i-Al₂O₃ Schottky barrier diodes, in which the space-charge region width is much over the de Broglie wavelength in GaN. An analysis of the temperature dependences of the I−V curves of forward-biased Schottky barriers showed that, in the temperature range 80−380 K, the current flow occurs as a tunneling one along dislocations crossing the space-charge region. The dislocation density ρ estimated from the I−V curves (in accordance with the model of tunneling along the dislocation line) was ≈ 1.7×10⁷ cm⁻². This value is close to that obtained with x-ray diffraction technique |
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| Date |
2017-05-27T20:09:23Z
2017-05-27T20:09:23Z 2007 |
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| Type |
Article
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| Identifier |
On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes / A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, V.P. Klad'ko, R.V. Konakova, Ya.Ya. Kudruk, A.V. Kuchuk, V.V. Milenin, Yu.N. Sveshnikov, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 1-5. — Бібліогр.: 13 назв. — англ.
1560-8034 PACS 61.72.Lk, 61.72.Vv, 73.40.Gk, 85.30.Kk http://dspace.nbuv.gov.ua/handle/123456789/117993 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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