Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition
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| Creator |
Glinchuk, K.D.
Litovchenko, N.M. Strilchuk, O.N. |
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| Description |
Physical fundamentals are analyzed for the method of determination of Cd₁₋xZnxTe composition x from measurements of the luminescence band peak position, emission being caused by annihilation of bound exciton - shallow neutral acceptor complexes at 4.2 K. Found are the conditions when application of the method discussed enables to obtain reliable x values.
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| Date |
2017-05-27T20:04:42Z
2017-05-27T20:04:42Z 2003 |
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| Type |
Article
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| Identifier |
Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 121-128. — Бібліогр.: 34 назв. — англ.
1560-8034 PACS: 78.55. - m; 78.55. Et http://dspace.nbuv.gov.ua/handle/123456789/117989 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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