Evolution of defective structure of the irradiated silicon during natural ageing
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Evolution of defective structure of the irradiated silicon during natural ageing
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| Creator |
Fodchuk, I.M.
Gutsulyak, T.G. Himchynsky, O.G. Olijnich-Lysjuk, A.V. Raransky, N.D. |
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| Description |
The defective structure of silicon single crystals grown by Chochralski method (Cz-Si) before and after an irradiation by high-energy electrons and gamma beams (E ~ 18 MeV) have been studied by the X-rey acoustic resonance method (XAR) and the method of low-frequency internal friction (LFIF). It is shown the basic types of defects that created after irradiation, have the dislocation nature. But their stability is different. It is also shown that in Cz-Si at room temperature (more 10000 hours) the relaxation of radiation defects in the ageing process occurs on the background of disintegration of oxygen oversaturated solid solution in silicon accompanying with occurrence of essential internal tensions.
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| Date |
2017-05-27T20:12:24Z
2017-05-27T20:12:24Z 2003 |
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| Type |
Article
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| Identifier |
Evolution of defective structure of the irradiated silicon during natural ageing / I.M. Fodchuk, T.G. Gutsulyak, O.G. Himchynsky, A.V. Olijnich-Lysjuk, N.D. Raransky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 147-152. — Бібліогр.: 8 назв. — англ.
1560-8034 PACS: 61.72.-y, 61.72.Dd http://dspace.nbuv.gov.ua/handle/123456789/117998 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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