Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment
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| Creator |
Kunets, V.P.
Kulish, N.R. Strelchuk, V.V. Nazarov, A.N. Tkachenko, A.S. Lysenko, V.S. Lisitsa, M.P. |
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| Description |
We report an enhancement of exciton luminescence in CdSxSe₁₋x QD embedded into borosilicate glass matrix and then treated by the low-temperature hydrogen RF plasma. Results clearly confirm the essential crushing of the surface levels that have a high nonradiative recombination efficiency.
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| Date |
2017-05-28T06:05:17Z
2017-05-28T06:05:17Z 2003 |
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| Type |
Article
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| Identifier |
Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment / V.P. Kunets, N.R. Kulish, V.V. Strelchuk, A.N. Nazarov, A.S. Tkachenko, V.S. Lysenko, M.P. Lisitsa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 169-171. — Бібліогр.: 13 назв. — англ.
1560-8034 PACS: 78.55.Et; 78.67.Hc; 71.55.Gs http://dspace.nbuv.gov.ua/handle/123456789/118011 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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