Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations
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| Creator |
Pyziak, L.
Obermayr, W. Zembrowska, K. Kuzma, M. |
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| Description |
Fractal analysis was used for the description of the geometry of the clusters formed within the Monte Carlo simulation of the first monolayer growth on Si substrate. Pulse laser deposition method was assumed for the epitaxy. Layers were obtained for various substrate temperatures varying in the range from 600 K to 800 K. The topography of plane clusters formed were characterised by their fractal box-like dimension. The relation between this dimension and the shape of the clusters was addressed.
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| Date |
2017-05-28T06:08:18Z
2017-05-28T06:08:18Z 2003 |
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| Type |
Article
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| Identifier |
Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations / L. Pyziak, W. Obermayr, K. Zembrowska, M. Kuzma // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 183-188. — Бібліогр.: 40 назв. — англ.
1560-8034 PACS: 02.70.Uu, 61.43.Bn http://dspace.nbuv.gov.ua/handle/123456789/118014 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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