Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures
|
|
| Creator |
Abdizhaliev, S.K.
Ismailov, K.A. Kamalov, A.B. Kudrik, Ya.Ya. |
|
| Description |
We studied I-V curves of Au-TiBx-n-n⁺-GaAs and Au-TiBx-n-SiC 6Н surface-barrier structures. The structures were exposed to microwave treatments (frequency of 2.45 GHZ, irradiance of 1.5 W/cm², duration of 0-500 s). For these structures we measured how the Schottky barrier height and ideality factor depended on microwave treatment duration. It was shown that microwave treatments whose duration are up to 20 s do not impair the main structure parameters, while those with duration of 0.5-10 s may even improve these parameters.
|
|
| Date |
2017-05-28T06:15:27Z
2017-05-28T06:15:27Z 2003 |
|
| Type |
Article
|
|
| Identifier |
Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures / S.K. Abdizhaliev, K.A. Ismailov, A.B. Kamalov, Ya.Ya. Kudrik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 202-204. — Бібліогр.: 14 назв. — англ.
1560-8034 PACS: 84.40.-x http://dspace.nbuv.gov.ua/handle/123456789/118018 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|