Temperature dependence of luminescence pecularities in oxygen doped ZnTe films
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Temperature dependence of luminescence pecularities in oxygen doped ZnTe films
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| Creator |
Malushin, N.V.
Skobeeva, V.M. Smyntyna, V.A. |
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| Description |
Temperature dependence of luminescence intensity inherent to zinc telluride films prepared by the method of vacuum deposition and containing an oxygen impurity was investigated. The model explaining non-monotonous behaviour of curve temperature dependence for the "oxygen" band (λmax = 650 nm) is offered. According to this model, during quenching luminescence, the centers of a luminescence and those of the majority carriers capture participate. Determined are the values of the activation energy and concentration of the appropriate centers at which abnormal dependence of luminescence intensity on the temperature is observed.
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| Date |
2017-05-28T06:23:39Z
2017-05-28T06:23:39Z 2003 |
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| Type |
Article
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| Identifier |
Temperature dependence of luminescence pecularities in oxygen doped ZnTe films / N.V. Malushin, V.M. Skobeeva, V.A. Smyntyna // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 214-216. — Бібліогр.: 3 назв. — англ.
1560-8034 PACS: 78.60.-b, 78.66.-w http://dspace.nbuv.gov.ua/handle/123456789/118021 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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