Запис Детальніше

Ultrasound influence on exciton emission of GaP light diodes

Vernadsky National Library of Ukraine

Переглянути архів Інформація
 
 
Поле Співвідношення
 
Title Ultrasound influence on exciton emission of GaP light diodes
 
Creator Gontaruk, O.M.
Khivrych, V.I.
Pinkovska, M.B.
Tartachnyk, V.P.
Olikh, Ya.M.
Vernydub, R.M.
Opilat, V.Ya.
 
Description Electroluminescence of GaP light diodes, treated by ultrasound at room and low temperatures has been studied. It has been found that short ultrasound caused improvement of red diode emission characteristics while electroluminescence degradation occurred in structures treated by prolong treatment at room temperature. Spectral curves measured under acoustic dynamic mode possess some specific features concerning fine structure. If reverse biased diodes possess microplasma initially, ultrasound action decreases its brightness. Possible mechanisms of the ultrasonic interaction with crystal structure defects have been discussed.
 
Date 2017-05-28T05:44:52Z
2017-05-28T05:44:52Z
2003
 
Type Article
 
Identifier Ultrasound influence on exciton emission of GaP light diodes / O.M. Gontaruk, V.I. Khivrych, M.B. Pinkovska, V.P. Tartachnyk, Ya.M. Olikh, R.M. Vernydub, V.Ya. Opilat // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 223-226. — Бібліогр.: 11 назв. — англ.
1560-8034
PACS: 78.55.-m, 78.60.-b, 85.60.Jb
http://dspace.nbuv.gov.ua/handle/123456789/118000
 
Language en
 
Relation Semiconductor Physics Quantum Electronics & Optoelectronics
 
Publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України