Ultrasound influence on exciton emission of GaP light diodes
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Ultrasound influence on exciton emission of GaP light diodes
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| Creator |
Gontaruk, O.M.
Khivrych, V.I. Pinkovska, M.B. Tartachnyk, V.P. Olikh, Ya.M. Vernydub, R.M. Opilat, V.Ya. |
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| Description |
Electroluminescence of GaP light diodes, treated by ultrasound at room and low temperatures has been studied. It has been found that short ultrasound caused improvement of red diode emission characteristics while electroluminescence degradation occurred in structures treated by prolong treatment at room temperature. Spectral curves measured under acoustic dynamic mode possess some specific features concerning fine structure. If reverse biased diodes possess microplasma initially, ultrasound action decreases its brightness. Possible mechanisms of the ultrasonic interaction with crystal structure defects have been discussed.
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| Date |
2017-05-28T05:44:52Z
2017-05-28T05:44:52Z 2003 |
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| Type |
Article
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| Identifier |
Ultrasound influence on exciton emission of GaP light diodes / O.M. Gontaruk, V.I. Khivrych, M.B. Pinkovska, V.P. Tartachnyk, Ya.M. Olikh, R.M. Vernydub, V.Ya. Opilat // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 223-226. — Бібліогр.: 11 назв. — англ.
1560-8034 PACS: 78.55.-m, 78.60.-b, 85.60.Jb http://dspace.nbuv.gov.ua/handle/123456789/118000 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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