Studies of CdHgTe as a material for x- and γ-ray detectors
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Studies of CdHgTe as a material for x- and γ-ray detectors
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| Creator |
Kosyachenko, L.A.
Kulchynsky, V.V. Maslyanchuk, O.L. Paranchych, S.Yu. Sklyarchuk, V.M. |
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| Description |
Optical, electric and photoelectric properties of Cd₁₋xHgxTe alloy with a low Hg content (x = 0.05) have been studied. The depth of impurity levels determining the conductivity of the material, their concentration and compensation degree, as well as the carrier lifetime and surface-recombination velocity have been found.
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| Date |
2017-05-28T05:45:33Z
2017-05-28T05:45:33Z 2003 |
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| Type |
Article
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| Identifier |
Studies of CdHgTe as a material for x- and γ-ray detectors / L.A. Kosyachenko, V.V. Kulchynsky, O.L. Maslyanchuk, S.Yu. Paranchych, V.M. Sklyarchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 227-232. — Бібліогр.: 19 назв. — англ.
1560-8034 PACS: 72.80.Ey http://dspace.nbuv.gov.ua/handle/123456789/118001 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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