Dielectric response of disordered ferroelectrics with embedded charged clusters
Vernadsky National Library of Ukraine
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Title |
Dielectric response of disordered ferroelectrics with embedded charged clusters
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Creator |
Morozovska, A.N.
Eliseev, E.A. Obukhovsky, V.V. |
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Description |
The model of static charged clusters, which adequately describes the dielectric hysteresis and permittivity of disordered ferroelectrics with non-isovalent impurities, has been proposed. The main result of paper is modified Landau-Ginzburg-Devonshire equation can be applied to the bulk ferroelectric materials with improper conductivity and movable charge fluctuations near the impurity centers.
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Date |
2017-05-28T05:46:56Z
2017-05-28T05:46:56Z 2003 |
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Type |
Article
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Identifier |
Dielectric response of disordered ferroelectrics with embedded charged clusters / A.N. Morozovska, E.A. Eliseev, V.V. Obukhovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 238-248. — Бібліогр.: 21 назв. — англ.
1560-8034 PACS: 77.80.-e http://dspace.nbuv.gov.ua/handle/123456789/118003 |
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Language |
en
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Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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