Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices
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| Creator |
Ivanov, V.N.
Konakova, R.V. Milenin, V.V. Stovpovoi, M.A. |
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| Description |
We studied barrier and ohmic contacts that are used when developing GaAs-based microwave devices. It is shown that Au-Mo-TiBx-n-GaAs barrier contacts have higher thermal stability than Au-Ti-n-GaAs ones. This is due to substantial slowdown of grain-boundary diffusion in Au-Mo-TiBx contacts resulting from use of amorphous TiBx layers as barrier material. A phase transition in them occurs at a temperature over 1000 °С. It was determined that use of TiBx as an antidiffusion layer in Au-TiBx-AuGe-n-GaAs ohmic contacts to Gunn diodes increases their service life as compared to the traditional Au-AuGe-n-GaAs ohmic contact.
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| Date |
2017-05-28T08:41:00Z
2017-05-28T08:41:00Z 2003 |
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| Type |
Article
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| Identifier |
Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices / V.N. Ivanov, R.V. Konakova, V.V. Milenin, M.A. Stovpovoi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 311-315. — Бібліогр.: 7 назв. — англ.
1560-8034 PACS: 85.30.Fg http://dspace.nbuv.gov.ua/handle/123456789/118027 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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