Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide
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| Creator |
Glinchuk, K.D.
Litovchenko, N.M. Strilchuk, O.N. |
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| Description |
An analysis of the 4.2 K exciton luminescence spectra of semi-insulating GaAs crystals with different concentrations of shallow acceptors (С) and donors (Si) is given. As a result, the 4.2 K capture coefficients of free excitons by shallow neutral acceptors [bA₀X = (4 ± 2) 10⁻⁸ cm³/s] and donors [bD₀X= (1.5 ± 0.8) 10⁻⁷ cm³/s] are found and also an estimate of the capture coefficient of free excitons by ionized shallow donors was made .
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| Date |
2017-05-28T08:49:56Z
2017-05-28T08:49:56Z 2003 |
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| Type |
Article
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| Identifier |
Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 274-277. — Бібліогр.: 10 назв. — англ.
1560-8034 PACS: 71.55. E; 78.55. E http://dspace.nbuv.gov.ua/handle/123456789/118029 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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