Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures
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| Creator |
Valakh, M.Ya.
Strelchuk, V.V. Kolomys, O.F. Hartnagel, H.L. Sigmund, J. |
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| Description |
Intersubband plasmon-phonon excitations in InAs/AlSb with InSb- and AlAs-like interfaces were studied using the Raman scattering method. It was found that InSb interface is characterized by a decreasing concentration and increasing mobility of 2D electrons in InAs quantum wells. In the case of AlAs interface at the heterojunction quantum well - barrier, the formation of AlSb₁₋xAsx solid solution takes place. Revealed are considerable concentration changes for 2D electrons at low temperatures in dependency on the excitation quantum energy.
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| Date |
2017-05-28T09:02:53Z
2017-05-28T09:02:53Z 2003 |
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| Type |
Article
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| Identifier |
Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures / M.Ya. Valakh, V.V. Strelchuk, O.F. Kolomys, H.L. Hartnagel, J. Sigmund // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 287-293. — Бібліогр.: 34 назв. — англ.
1560-8034 PACS: 63.22.+m, 72.10.Di, 78.30.-j http://dspace.nbuv.gov.ua/handle/123456789/118031 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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