Regularities of visible photoluminescence creation in low-dimensional silicon structures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Regularities of visible photoluminescence creation in low-dimensional silicon structures
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| Creator |
Manoilov, E.G.
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| Description |
The evolution of time-resolved photoluminescence (PL) spectra in Au-doped nanocrystalline silicon films produced by laser ablation has been studied. The PL spectra with a relaxation time of nanoseconds are broad; they lie in the energy range 1.4-3.2 eV with a peak at 2.4-2.8 eV. At the longest times of tens of microseconds, the spectra become narrower, with a peak at 1.6 eV. At intermediate times, two bands are observed: low-energy (1.6 eV) and high-energy, with the peak shifting from 2.7 to 2.1 eV with time increasing. The data are discussed in terms of quantum confinement, dielectric amplification, and manifestation of kinetically coupled electron-hole and exciton subsystems. Ions and atoms of gold passivate dangling bonds at Si surface and serve as catalysts for oxidation of nanocrystals.
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| Date |
2017-05-28T09:04:56Z
2017-05-28T09:04:56Z 2003 |
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| Type |
Article
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| Identifier |
Regularities of visible photoluminescence creation in low-dimensional silicon structures / E.G. Manoilov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 303-306. — Бібліогр.: 9 назв. — англ.
1560-8034 PACS: 78.47.+p, 78.55.A, 78.67.Bf http://dspace.nbuv.gov.ua/handle/123456789/118034 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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