Avalanche multiplication of charge carriers in nanostructured porous silicon
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Avalanche multiplication of charge carriers in nanostructured porous silicon
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| Creator |
Timokhov, D.F.
Timokhov, F.P. |
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| Description |
The phenomenon of avalanche multiplication of charge carriers in Al/PS-(c-Si) sandwich-structures based on nanostructured porous silicon (PS) is studied. Experimentally received dependences of ionization rates on intensity of an electrical field correspond to the diffusion mechanism of electron-hole pairs heating up to a threshold of ionization. The distinction of effective factors of shock ionization for electrons and holes is unsignificant. The estimation of length of free run of hot electrons is carried out at scattering of energy on the optical phonons.
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| Date |
2017-05-28T09:05:47Z
2017-05-28T09:05:47Z 2003 |
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| Type |
Article
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| Identifier |
Avalanche multiplication of charge carriers in nanostructured porous silicon / D.F. Timokhov, F.P. Timokhov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 307-310. — Бібліогр.: 14 назв. — англ.
1560-8034 PACS: 72.80.Cw; 72.80.Ng; 72.40.+w; 73.40.Gk http://dspace.nbuv.gov.ua/handle/123456789/118035 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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