Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures
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| Creator |
Olikh, O.Ya.
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| Description |
The effects of microwave (2.45 GHz) treatment influence on the cross section for electron capture and the energy of the deep levels in the forbidden gap of GaAs monocrystals and n-n⁺ epitaxial structures have been investigated using acoustoelectric transient spectroscopy.
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| Date |
2017-05-28T16:43:00Z
2017-05-28T16:43:00Z 2003 |
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| Type |
Article
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| Identifier |
Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures / O.Ya. Olikh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 450-453. — Бібліогр.: 14 назв. — англ.
1560-8034 PACS: 72.50.+b http://dspace.nbuv.gov.ua/handle/123456789/118085 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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