Atomic defects and physical-chemical properties of PbTe-InTe solid solutions
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Atomic defects and physical-chemical properties of PbTe-InTe solid solutions
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| Creator |
Freik, D.M.
Boychuk, V.I. Mezhylovsjka, L.I. |
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| Description |
Crystal-quasichemical equations of probable mechanisms inherent to formation of solid solutions based on lead telluride of the n-type in PbTe-InTe system are offered. Shown is the possibility to satisfactorily explain experimental results by filling with indium atoms In⁺² <--> In⁺¹ In⁺³ (up to 3 mol. % InTe) octahedral hollows (IH) of close-packed arrangement of tellurium atoms in PbTe crystal lattice. At the greater content of indium telluride, the allocation of both In⁺¹ on OH, and In⁺³ on tetrahedral hollows (TH), accordingly, takes place.
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| Date |
2017-05-28T16:33:02Z
2017-05-28T16:33:02Z 2003 |
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| Type |
Article
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| Identifier |
Atomic defects and physical-chemical properties of PbTe-InTe solid solutions / D.M. Freik, V.I. Boychuk, L.I. Mezhylovsjka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 454-457. — Бібліогр.: 7 назв. — англ.
1560-8034 PACS: 64.90+b http://dspace.nbuv.gov.ua/handle/123456789/118073 |
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| Language |
en
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| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
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| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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