Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions
|
|
| Creator |
Kovalyuk, Z.D.
Makhniy, V.P. Yanchuk, O.I. |
|
| Description |
Voltage-current characteristics forwardly biased heterojunctions p-GaSe-n-InSe made by the method of optical contact are analyzed. Asit was ascertained, the forward current is determined by tunnel-recombination processes at low voltages and overbarrier emission. The experimental characteristics are defined by the known theoretical expressions for anisotipical heterojunctions with the energy diagram by Andersen.
|
|
| Date |
2017-05-28T16:33:33Z
2017-05-28T16:33:33Z 2003 |
|
| Type |
Article
|
|
| Identifier |
Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions / Z.D. Kovalyuk, V.P. Makhniy, O.I. Yanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 458-460. — Бібліогр.: 6 назв. — англ.
1560-8034 PACS: 73.40.-c http://dspace.nbuv.gov.ua/handle/123456789/118074 |
|
| Language |
en
|
|
| Relation |
Semiconductor Physics Quantum Electronics & Optoelectronics
|
|
| Publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
|
|